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| LLDB3, LLDB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within four volts with a typical breakover voltage of LLDB3 32 V, LLDB4 40 V. These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. Storage Temperature Range TS - 40 OC to +150 OC Dimensions in mm Operating Temperature Range TJ - 40 OC to +100 OC MAXIMUM RATINGS at 50 OC Ambient Peak Current (10 s duration, 120 cycle repetition rate) IP 2 A Max. Peak output voltage eP 3 Volts Max.1) Characteristics at Ta = 25 OC Parameter Breakover Voltage Breakover Currents Breakover Voltage Symmetry Dynamic Breakover Voltage I = [IBR to IF = 10 mA] Thermal Impedance Junction to Ambient Air LLDB3 LLDB4 Symbol V(BR)1 and V(BR)2 I(BR)1 and I(BR)2 [V(BR)1]-[V(BR)2] | V | RJA Min. 28 35 5 Max. 36 45 200 3.8 60 O Unit V A V V C/W DIAC load up to 1500 W 3.3 K 60~ 120 V 0.1 uF 20 ep 120 VAC 60 Hz 200 K TRIAC 1) CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 uF 100 V BILATERAL TRIGGER DIAC TYPICAL DIAC-TRIAC FULL-WAVE PHASE CONTROL CIRCUIT SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 18/01/2008 |
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